smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source KDB3632 (fdb3632) features r ds(on) =7.5m (typ.), v gs = 10v, i d = 80a q g(tot) = 84nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current-continuous t c 111 80 a t a =25 12 a power dissipation 310 w derate above 25 2.07 w/ thermal resistance junction to ambient r ja 43 /w thermal resistance, junction-to-case r jc 0.48 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d i d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type product specification
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 100 v v ds =80v,v gs =0 1 a v ds =80v,v gs =0,t c =150 250 a gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250a 2.0 4.0 v v gs =10v,i d =80a 0.0075 0.009 v gs =6v,i d =40a 0.009 0.015 v gs =10v,i d =80a,t c =175 0.018 0.022 input capacitance c iss 6000 pf output capacitance c oss 820 pf reverse transfer capacitance c rss 200 pf total gate charge at 10v q g(tot) v gs = 0v to 10v 84 110 nc threshold gate charge q g(th) v gs =0vto2v 11 14 nc gate to source gate charge q gs 30 nc gate charge threshold to plateau q gs2 20 nc gate to drain "miller" charge q gd 20 nc turn-on time t on 102 ns turn-on delay time t d(on) 30 ns rise time t r 39 ns turn-off delay time t d(off) 96 ns fall time t f 46 ns turn-off time t off 213 ns i sd =80a 1.25 v i sd =40a 1.0 v reverse recovery time tr r i sd = 75a, d isd /d t =100a/s 64 ns reverse recovered charge q rr i sd = 75a, d isd /d t =100a/s 120 nc source to drain diode voltage v sd v ds =25v,v gs =0,f=1mhz v ds =50v,i d = 80a,i g =1.0ma drain cut-off current i dss v dd =50v,i d =80a, v gs =10v,r gen =3.6 drain to source on-state resistance r ds(on) 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type KDB3632 (fdb3632) smd type smd type smd type smd type smd type smd type smd type product specification
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